Title :
Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis
Author :
am Ende, B.A. ; Cresswell, M.W. ; Allen, R.A. ; Headley, T.J. ; Guthrie, W.F. ; Linholm, L.W. ; Bogardus, E.H. ; Murabito, C.E.
Abstract :
NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.
Keywords :
calibration; image processing; lithography; measurement standards; spatial variables measurement; transmission electron microscopy; Si; automated phase-contrast image analysis; bridge; calibration; critical dimension metrology; electrical test structure; high-resolution transmission electron microscopy; lattice constant; linewidth measurement; lithographic process control; monocrystalline silicon film; standard reference feature; Automatic testing; Bridges; Electric variables measurement; Image analysis; Laboratories; Metrology; NIST; Phase measurement; Silicon; Standards development;
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
DOI :
10.1109/ICMTS.2002.1193161