A Low-Loss Single-Pole-Double-Throw (SPDT) Switch Circuit

Author

Tang, M. ; Liu, A.Q. ; Agarwal, Abhishek

Author_Institution

Inst. of Microelectron., Singapore

fYear

2007

fDate

10-14 June 2007

Firstpage

679

Lastpage

682

Abstract

A low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz. High compactness and low loss can be obtained by use of the lateral switches and coplanar waveguide (CPW) configuration. The circuit provides > 24-dB isolation and < 0.9-dB insertion loss up to 20 GHz. The pull-in voltage of the switch is only 12.4 V, with a switching-on time of 35 mus and a switching-off time of 36 mus. A single-mask silicon-on-glass (SiOG) fabrication process has been developed to fabricate the SPDT switch circuit on glass, which has the advantages of low loss and high yield. The whole circuit has a size of 1.64 mm times 1.3 mm.

Keywords

coplanar waveguides; glass; microswitches; silicon-on-insulator; coplanar waveguide configuration; frequency 20 GHz; lateral RF MEMS switches; low-loss SPDT switch circuit; single-mask silicon-on-glass fabrication; single-pole-double-throw switch circuit; time 35 mus; time 36 mus; Coplanar waveguides; Electrodes; Etching; Glass; Radiofrequency microelectromechanical systems; Silicon; Structural beams; Switches; Switching circuits; Voltage; RF MEMS; SPDT; low loss; silicon-on-glass;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300221

Filename

4300221