DocumentCode
3373918
Title
Metallization proximity studies for copper spiral inductors on silicon
Author
Sia, C.B. ; Yeo, K.S. ; Chu, Shao-Fu ; Zeng, Z. ; Lee, T.H.
Author_Institution
Chartered Semicond. Manuf. Ltd., Singapore, Singapore
fYear
2002
fDate
8-11 April 2002
Firstpage
25
Lastpage
29
Abstract
The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption trade-off with respect to its core diameter is evaluated qualitatively for the first time. Effects of the inductor´s proximate grounded metallization on its overall inductive performance are also analyzed.
Keywords
copper; inductors; metallisation; Cu; Si; copper spiral inductor; metallization proximity; silicon substrate; Conductors; Copper; Costs; Inductance; Inductors; Metallization; Q factor; Silicon; Spirals; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN
0-7803-7464-9
Type
conf
DOI
10.1109/ICMTS.2002.1193165
Filename
1193165
Link To Document