Fault isolation challenges and opportunities for proximal-probe imaging

This paper will discuss how continued resolution scaling of present far-field optical, thermal and magnetic fault isolation methods applied through backside silicon is unsustainable. The `search areas´ resulting remain too large for the high-resolution electrical characterization and physical imaging required for conclusively identifying defects at advanced technology nodes. The need for improved nanoscale fault isolation is presented based on a growing class of proximal probe measurements operating in or approximating the near-field.