Title :
Test structure for precise statistical characteristics measurement of MOSFETs
Author :
Shimizu, Yoshiyuki ; Nakamura, Mitsuo ; Matsuoka, Toshimasa ; Taniguchi, Kenji
Author_Institution :
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
Abstract :
A new test structure consisting of an MOSFET array and peripheral decoder circuits is proposed to study statistical variation (mismatch) in MOSFETs´ characteristics. Kelvin technique was implemented in the structure to cancel parasitic resistance of metal wiring and transmission gates in such a way that any MOSFET in the array can be measured at the same bias condition. Accurate electrical measurements using the structure makes it possible to derive statistical variation of threshold voltage and transconductance of MOSFETs placed in small area.
Keywords :
MOSFET; arrays; characteristics measurement; semiconductor device measurement; semiconductor device testing; voltage measurement; Kelvin technique; MOSFET array; MOSFET statistical characteristics measurement; bias condition; electrical measurements; metal wiring; parasitic resistance; peripheral decoder circuits; test structure; threshold voltage; transconductance; transmission gates; Area measurement; Circuit testing; Decoding; Electric resistance; Electric variables measurement; Electrical resistance measurement; Kelvin; MOSFETs; Threshold voltage; Wiring;
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
DOI :
10.1109/ICMTS.2002.1193170
