Title :
A new substrate model and parameter extraction method for DNW RF MOSFETs
Author :
Liu, Jun ; Sun, Lingling ; Yu, Zhiping ; Condon, Marissa
Author_Institution :
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
fDate :
May 30 2010-June 2 2010
Abstract :
A new compact model for the substrate network of RF MOSFETs with deep n-well (DNW) implantation is presented. A novel test structure proposed in is employed to directly access the characteristics of the substrate in two-port measurements for the extraction of substrate network components. A method is developed to analytically extract the parameters for the substrate network from two-port measurements. The methodology is verified and validated by the excellent match between the measured and simulated output admittances for a 64-finger DNW n-MOSFET in common-source configuration.
Keywords :
MOSFET; semiconductor device testing; substrates; DNW RF MOSFET; compact model; deep n-well implantation; parameter extraction; substrate model; substrate network component; test structure; two-port measurement; CMOS technology; Capacitance; Circuit testing; Equivalent circuits; Immune system; Isolation technology; MOSFETs; Parameter extraction; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537128
