Title :
Identification of electrically active non-visual defects in advanced devices
Author :
Bersuker, Gennadi
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
It is demonstrated that a proposed microscopic description of the carrier transport in dielectrics, which takes into account an interaction of the charged carriers with the lattice, allows identifying structural defects contributing to a variety of electrical measurements.
Keywords :
MIS devices; dielectric materials; carrier transport; charged carrier interaction; dielectrics; electrical measurement; electrically active nonvisual defect identification; lattice; microscopic description; structural defect identification; Dielectrics; Electric variables measurement; Lattices; Logic gates; Object recognition; Semiconductor device measurement; Temperature measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306329
