Title :
Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance model
Author :
Ingvarson, Fredrik ; Linder, Martin ; Jeppson, Kjell O.
Author_Institution :
Solid State Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A straightforward method for extracting the base and emitter resistances is presented. The method has the following properties: 1) only a standard forward Gummel measurement on one transistor is required, 2) current-crowding and conductivity-modulation in the base are accounted for through the use of an accurate base resistance model, and 3) the resistance parameters are extracted using a non-linear optimization step. Furthermore, a technique for extraction of the high-injection parameters of a modified collector current model is also presented.
Keywords :
bipolar transistors; semiconductor device models; Gummel measurement; base resistance; base resistance model; bipolar transistor; collector current model; conductivity modulation; current crowding; emitter resistance; high-injection parameters; nonlinear optimization; parameter extraction; Bipolar transistors; Circuit testing; Conductivity measurement; Current measurement; Data mining; Electrical resistance measurement; Measurement standards; Optimization methods; Semiconductor device modeling; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
DOI :
10.1109/ICMTS.2002.1193174
