DocumentCode
3374048
Title
Impact of pre-existing voids on electromigration in copper interconnects
Author
Mario, Hendro ; Meng Keong Lim ; Gan, C.L.
Author_Institution
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
5
Abstract
Previous in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.
Keywords
copper; electromigration; integrated circuit interconnections; reliability; Cu; cathode; copper interconnects; electromigration; failure analysis; voids; Cathodes; Electromigration; Failure analysis; Integrated circuit interconnections; Reservoirs; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306330
Filename
6306330
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