• DocumentCode
    3374048
  • Title

    Impact of pre-existing voids on electromigration in copper interconnects

  • Author

    Mario, Hendro ; Meng Keong Lim ; Gan, C.L.

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Previous in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.
  • Keywords
    copper; electromigration; integrated circuit interconnections; reliability; Cu; cathode; copper interconnects; electromigration; failure analysis; voids; Cathodes; Electromigration; Failure analysis; Integrated circuit interconnections; Reservoirs; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4673-0980-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2012.6306330
  • Filename
    6306330