CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer

The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n^-p^-n⁺ or ip^-n⁺ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si_1-xGe_x is demonstrated both experimentally and via simulations.