CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer

Author

Ortiz, C.J. ; Nanver, L.K. ; van Noort, R.D. ; Scholtes, T.L.M. ; Slotboom, J.W.

Author_Institution

Lab. of ECTM, Delft Univ. of Technol., Netherlands

fYear

2002

fDate

8-11 April 2002

Firstpage

83

Lastpage

88

Abstract

The use of CV measurements to profile the electrically active impurity profile of dopants has long been popular as a fast and non-destructive measurement technique. In this work, an n^-p^-n⁺ or ip^-n⁺ structure is proposed for CV-doping profiling of the tail of boron-doped regions extending into a lightly doped top layer. The usefulness of this method for the evaluation of boron transient enhanced diffusion (TED) effects in Si and Si_1-xGe_x is demonstrated both experimentally and via simulations.

Keywords

Ge-Si alloys; arsenic; boron; buried layers; diffusion; doping profiles; elemental semiconductors; heavily doped semiconductors; semiconductor epitaxial layers; semiconductor materials; silicon; C-V dopant profiling; Si:As,B; SiGe:As,B; abrupt highly-doped arsenic buried epilayer; boron out-diffusion; boron transient enhanced diffusion; nondestructive measurement; Annealing; Boron; Doping; Electric variables measurement; Epitaxial growth; Implants; Impurities; Laboratories; Silicon; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on

Print_ISBN

0-7803-7464-9

Type

conf

DOI

10.1109/ICMTS.2002.1193176

Filename

1193176