Title :
Process variation compensation of a 4.6 GHz LNA in 65nm CMOS
Author :
Mukadam, Mustansir Yunus ; Filho, Oscar Gouveia ; Zhang, Xuan ; Apsel, Alyssa B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
May 30 2010-June 2 2010
Abstract :
We present the design of a 4.6 GHz LNA in TSMC 65nm with a feedback scheme to compensate for variations across process, supply voltage, and temperature. No post fabrication efforts are required in this compensation method. The proposed method improves the variation in S21 of an inductively degenerated cascode LNA from 8.75% to 1.27%, which is a reduction in variation of 85%. The presented scheme is also robust over variations in supply voltage, temperature, and process conditions. The compensation method presented can be utilized to stabilize the gain of a wide variety of amplifiers.
Keywords :
CMOS integrated circuits; feedback amplifiers; low noise amplifiers; nanoelectronics; CMOS; LNA; TSMC; amplifiers; feedback scheme; frequency 4.6 GHz; process variation compensation; size 65 nm; CMOS process; Capacitance; Fabrication; Impedance matching; Manufacturing processes; Noise figure; Radio frequency; Temperature; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537131
