DocumentCode :
3374113
Title :
A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs
Author :
Odanaka ; Yamashita, Katsumi ; Koike, Noriki ; Tatsuuma, K.
Author_Institution :
Cybermedia Center, Osaka Univ., Japan
fYear :
2002
fDate :
8-11 April 2002
Firstpage :
95
Lastpage :
99
Abstract :
Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-hν/kTe).
Keywords :
MOSFET; hot carriers; photoemission; semiconductor device testing; 0.25 micron; Boltzman distribution; CMOSFET; hot-carrier-induced photoemission; spectrum analysis; test structure; CMOSFETs; Charge coupled devices; Hot carriers; MOSFETs; Optical filters; Optical microscopy; Optical variables control; Photoelectricity; Testing; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
Type :
conf
DOI :
10.1109/ICMTS.2002.1193178
Filename :
1193178
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3374113
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