DocumentCode :
3374183
Title :
Spike based learning with weak multi-level static memory
Author :
Riis, H. Kolle ; Häfliger, P.
Author_Institution :
Inst. of Informatics, Oslo Univ., Norway
Volume :
5
fYear :
2004
fDate :
23-26 May 2004
Abstract :
In this paper we present a VLSI implementation of learning synapse that that uses a spike based learning rule to adjust its weight. The weight is stored on a recently presented weak multi-level static memory cell (MLSM) by Hafliger and Riis (see ibid., May 2003). This memory cell stores a voltage on a capacitance and that voltage is weakly driven to the closest of several stable levels. We verified the suitability of this memory for this task in a VLSI chip implementation. An array of integrate and fire neurons with four of these learning synapse each was implemented on a 0.6 μm AMS CMOS chip. The learning capability of these neurons was tested in simple spike and rate based pattern recognition tasks in a two neuron network. Cross-inhibition between them lead to improved decorrelation of the output spikes, inducing a tendency in the neurons to specialize on different patterns.
Keywords :
CMOS integrated circuits; VLSI; learning (artificial intelligence); memory architecture; neural nets; pattern recognition; 0.6 micron; AMS CMOS chip; VLSI chip implementation; cross-inhibition; learning rule; learning synapse; multilevel static memory cell; neuron network; pattern recognition tasks; Circuits; Digital control; Learning systems; Neuromorphics; Neurons; Pulse measurements; Secondary generated hot electron injection; Tunneling; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
Type :
conf
DOI :
10.1109/ISCAS.2004.1329587
Filename :
1329587
Link To Document :
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