• DocumentCode
    3374191
  • Title

    High-power laser diode bars

  • Author

    Lichtenstein, N. ; Baettig, R. ; Brunner, Ralf ; Gilbert, Y. ; Krejci, M. ; Muller, Johannes ; Todt, R. ; Valk, B.

  • Author_Institution
    Oclaro Switzerland AG, Zurich, Switzerland
  • fYear
    2010
  • fDate
    3-3 Nov. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Recent progress in the development of 9xx and 808 nm high power laser diode bars and the application in a laser head with line focus for crystallization of silicon thin films is reported.
  • Keywords
    crystallisation; elemental semiconductors; laser materials processing; optical films; optical focusing; semiconductor growth; semiconductor lasers; semiconductor thin films; silicon; Si; crystallization; high-power laser diode bars; laser head; line focusing; silicon thin films; wavelength 808 nm; Lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Power Diode Lasers and Systems Conference (HPD), 2010
  • Conference_Location
    Telford
  • Print_ISBN
    978-1-4244-8699-1
  • Type

    conf

  • DOI
    10.1109/HPD.2010.6024190
  • Filename
    6024190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3374191