Extraction of the coupling coefficients for the top-floating-gate (TFG) flash EEPROM cell

Author

McCarthy, Diarmuid ; O´Shea, Mike ; Duane, Russell ; McCarthy, Kevin ; Concannon, Ann ; Mathewson, Alan

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

fYear

2002

fDate

8-11 April 2002

Firstpage

139

Lastpage

144

Abstract

A novel measurement technique utilising a new test structure is applied to the existing subthreshold methodology to extract coupling coefficients of the Top-Floating-Gate (TFG) cell. The TFG cell is unique in structure and operation in comparison with current NVM devices. It is designed with the FG surrounding the CG which greatly enhances the gate coupling ratio (α_cg) allowing a small area cell and avoiding the use of expensive z-direction extensions unlike the industry standard stacked-gate approach. This work quantifies this benefit for the area efficient TFG cell design.

Keywords

CMOS memory circuits; flash memories; integrated circuit measurement; integrated circuit testing; 1.5 micron; area efficient TFG cell design; coupling coefficients extraction; coupling ratio; doping schemes; double-poly double-metal 1.5 μm CMOS technology; gate coupling ratio; measurement technique; subthreshold methodology; test structure; top-floating-gate flash EEPROM cell; CMOS logic circuits; CMOS technology; Character generation; EPROM; Logic devices; MOSFETs; Microelectronics; Silicon; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on

Print_ISBN

0-7803-7464-9

Type

conf

DOI

10.1109/ICMTS.2002.1193186

Filename

1193186