DocumentCode
3374313
Title
Predictable Three-Dimensional Microfluidic Channel Fabrication in a Single-Mask Process
Author
Gantz, Kevin ; Agah, Masoud
Author_Institution
Virginia Tech, Blacksburg
fYear
2007
fDate
10-14 June 2007
Firstpage
755
Lastpage
758
Abstract
This paper presents the results of an investigation into the effect of geometrical patterns of the photomask on the dimensions of the trench that evolves after silicon isotropic etching. The study is based on the most complex surface pattern to date, composed of five independent geometric variables. Data from over 180 different patterns was collected to examine the influence of each parameter on the result. Two Langmuir-based models were developed relating the channel depth and width dimensions to the exposed pattern. These new models provide the capability to design complex microfluidic networks using only a single mask with channel dimensions predicted to 5% of their actual value.
Keywords
masks; microfluidics; photolithography; silicon; sputter etching; 3-D microfluidic channel fabrication; Langmuir-based mathematical models; complex microfluidic networks design; complex surface patterns; independent geometric variables; photolithographic pattern; photomask geometrical patterns; reactive ion etching; silicon isotropic etching; wafer surface pattern; Etching; Fabrication; Geometry; Lithography; Microfluidics; Predictive models; Semiconductor device modeling; Silicon; Solid modeling; Surface topography; isotropic etching; microfluidics; reactive ion etch lag; single-mask;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location
Lyon
Print_ISBN
1-4244-0842-3
Electronic_ISBN
1-4244-0842-3
Type
conf
DOI
10.1109/SENSOR.2007.4300240
Filename
4300240
Link To Document