Title :
Test structures for analyzing radiation effects in bipolar technologies
Author :
Barnaby, H.J. ; Schrimpf, R.D. ; Galloway, K.F. ; Ball, D.R. ; Pease, R.L. ; Fouillat, Pascal
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate terminals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.
Keywords :
BiCMOS integrated circuits; bipolar integrated circuits; bipolar transistors; integrated circuit testing; radiation effects; surface recombination; BJT; BiCMOS test chips; analog bipolar circuits; bipolar technologies; circuit level; device level; discrete bipolar devices; electrical response; gate biasing techniques; independent gate terminals; radiation effects; radiation-induced defects; test structures; BiCMOS integrated circuits; Circuit analysis; Circuit testing; Degradation; Design engineering; Integrated circuit technology; Metallization; Protons; Radiation effects; System testing;
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
DOI :
10.1109/ICMTS.2002.1193196
