DocumentCode
3374682
Title
Systematic mismatch in diffusion resistors caused by photolithography
Author
Hausser, Stefan ; Majoni, Stefan ; Schligtenhorst, Holger ; Kolwe, Georg
Author_Institution
Philips Semicond. GmbH, Boeblingen, Germany
fYear
2002
fDate
8-11 April 2002
Firstpage
247
Lastpage
250
Abstract
During the qualification of a 0.35μm CMOS process, it was observed that diffusion resistors showed a systematic mismatch, depending on the position on the wafer. The mismatch increased from the center of the wafer to the outer regions. Various experiments showed that the mismatch was caused by spinning the wafer during the resist development process. Changing this process eliminated the systematic diffusion resistor mismatch.
Keywords
CMOS integrated circuits; diffusion; photolithography; photoresists; resistors; 0.35 micron; CMOS process qualification; diffusion resistor mismatch; photolithography; resist development; wafer spinning; CMOS process; Electrical resistance measurement; Immune system; Lithography; Metallization; Probes; Qualifications; Resistors; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN
0-7803-7464-9
Type
conf
DOI
10.1109/ICMTS.2002.1193204
Filename
1193204
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