Title :
Analytical model for high current density trench gate MOSFET
Author :
Dharmawardana, K.G.P. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Abstract :
An analytical model for the trench gate MOSFET is presented. It consists of a more accurate model for the inversion channel region, which considers the effects of doping variation, transverse and longitudinal electric fields on electron mobility. In addition, it also accurately incorporates the feature of current transfer from the accumulation channel region into the n-drift region. The model presented and validated by numerical simulation results can be useful in the initial design of optimum device structures
Keywords :
current density; electric fields; electron mobility; isolation technology; numerical analysis; power MOSFET; power semiconductor switches; semiconductor device models; accumulation channel region; analytical model; current density; current transfer; doping variation effects; electron mobility; inversion channel region model; longitudinal electric fields; n-drift region; numerical simulation; optimum device structure design; transverse electric fields; trench gate MOSFET; trench gate MOSFET model; Analytical models; Current density; Doping profiles; Electron mobility; Gaussian distribution; Low voltage; MOSFET circuits; Numerical simulation; Power MOSFET; Semiconductor process modeling;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702712
