Title :
A new current limit circuit for smart discrete devices
Author :
Shen, Z. John ; Robb, Stephen P.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
A new current limit circuit with a sensitivity level down to approximately 100 mV is proposed in this paper. The new circuit has been integrated with a collector-gate clamped IGBT. The circuit concept, device structure, fabrication and characteristics are discussed in detail. The new current limit clamped IGBT is to be primarily used in automotive ignition applications
Keywords :
automotive electronics; circuit testing; current limiters; electric ignition; insulated gate bipolar transistors; power bipolar transistors; semiconductor device testing; sensitivity; automotive ignition applications; circuit concept; collector-gate clamped IGBT; current limit circuit; current limit circuit sensitivity level; current limit clamped IGBT; device fabrication; device structure; smart discrete devices; Automotive engineering; Circuits; Coils; Fabrication; Ignition; Insulated gate bipolar transistors; MOSFETs; Protection; Resistors; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702714
