Title :
A new phenomenon of p-channel dual action device
Author :
Watabe, Kiyoto ; Akiyama, Hajime ; Terashima, Tomohide ; Nobuto, Shinji ; Fukunaga, Masanori ; Yamawaki, Masao
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A novel lateral power device termed the p-channel dual action device (p-ch DAD) is proposed and demonstrated in action experimentally and numerically. It consists of a p-channel HVMOS, n-channel HVMOS and resistance. This hybrid device has increased on-state current without lowering the device breakdown voltage. The conductivity modulation of the new device is discussed
Keywords :
electric breakdown; electric current; electric resistance; electrical conductivity; numerical analysis; power MOSFET; semiconductor device models; semiconductor device testing; device breakdown voltage; device conductivity modulation; hybrid device; lateral power device; n-channel HVMOS; on-state current; p-ch DAD; p-channel HVMOS; p-channel dual action device; resistance; Anodes; Breakdown voltage; Cathodes; Conductivity; Electric breakdown; Equivalent circuits; Insulated gate bipolar transistors; Laboratories; Substrates; Ultra large scale integration;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702716
