Title :
Temperature dependent behaviour of silicon power semiconductors-a new physical model validated by device-internal probing between 400 K and 100 K
Author :
Schlögl, A.E. ; Mnatsakanov, T.T. ; Schröder, D.
Author_Institution :
Tech. Univ. Munchen, Germany
Abstract :
A new physical model for characterization of the temperature dependent operation of power semiconductor devices is presented. It is based on the application of a new continuity equation for description of the carrier transport in the low doped layer of power semiconductor structures. Modern results of carrier mobility description, particularly with regard to EHS (electron hole scattering), are strictly taken into account, even the temperature conditioned effective ionization of doping atoms. The model is validated by FCA (free carrier absorption) experiments at temperatures between 100 K and 400 K
Keywords :
carrier mobility; doping profiles; elemental semiconductors; ionisation; power semiconductor devices; probes; semiconductor device models; semiconductor device testing; silicon; thermal analysis; 100 to 400 K; EHS; Si; carrier mobility description; carrier transport; continuity equation; device-internal probing; electron hole scattering; free carrier absorption; low doped layer; model validation; physical model; power semiconductor devices; power semiconductor structures; silicon power semiconductors; temperature conditioned effective doping atom ionization; temperature dependent behaviour; temperature dependent operation; Atomic layer deposition; Charge carrier processes; Electron mobility; Equations; Ionization; Power semiconductor devices; Scattering; Semiconductor device doping; Silicon; Temperature dependence;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702723
