Title :
Leakage power profiling and leakage power reduction using DFT hardware
Author :
Sethuram, Rajamani ; Arabi, Karim ; Abu-Rahma, Mohamed
Author_Institution :
Qualcomm CDMA Technol., San Diego, CA, USA
Abstract :
In a CMOS logic circuit, the leakage power dissipated depends on the state of the design. In this paper we propose a novel technique to use the Q-gating logic that are added to reduce power during shift to also reduce leakage power during functional standby mode of the circuit. First, we propose leakage-aware test (λ-test) vector generation that can be used to profile leakage power consumed by the circuit. This is used to identify blocks that drains excessive standby leakage power. We also propose a new partial Q-gating technique that uses the λ-test to determine the subset of flops that should be gated-off to achieve maximum simultaneous reduction in shift mode dynamic power and standby mode leakage power. A fast, test relaxation and test cube merging algorithm is used for this purpose. Experiments conducted on ISCAS and ITC benchmarks show up to 43.6% reduction in leakage power. For the partial gated design, we obtained up to 15.3% leakage power reduction and up to 6.1× reduction in shift power.
Keywords :
CMOS logic circuits; automatic test pattern generation; benchmark testing; design for testability; leakage currents; logic gates; logic testing; λ-test vector generation; CMOS logic circuit; DFT hardware; ISCAS benchmarks; ITC benchmarks; Q-gating logic; functional standby mode; gated-off; leakage power profiling; leakage power reduction; leakage-aware test vector generation; partial Q-gating technique; partial gated design; shift mode dynamic power; simultaneous reduction; standby mode leakage power; test cube merging algorithm; test relaxation; Automatic test pattern generation; Circuit faults; Hardware; Heuristic algorithms; Leakage current; Logic gates; Merging;
Conference_Titel :
VLSI Test Symposium (VTS), 2011 IEEE 29th
Conference_Location :
Dana Point, CA
Print_ISBN :
978-1-61284-657-6
DOI :
10.1109/VTS.2011.5783753