• DocumentCode
    3375334
  • Title

    Impedance of planar diode with a resonant-tunnel border

  • Author

    Prokhorov, E.D. ; Botsula, O.V. ; Reutina, O.A.

  • Author_Institution
    V.N. Karazin Kharkiv Nat. Univ., Kharkiv, Ukraine
  • fYear
    2013
  • fDate
    23-28 June 2013
  • Firstpage
    283
  • Lastpage
    285
  • Abstract
    The RTB planar diode shows a negative active impedance component (ReZ <; 0) in the range of wide frequencies. Frequencies corresponding to ReZ → 0 for analyzed microstructures (when S ~ 10-6 cm2), remain within the range up to 100 ... 300 GHz.
  • Keywords
    resonant tunnelling diodes; RTB planar diode; frequency 100 GHz to 300 GHz; negative active impedance component; planar diode impedance; resonant-tunnel border; Anodes; Cathodes; Impedance; Oscillators; Resistance; Resonant tunneling devices; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on
  • Conference_Location
    Kharkiv
  • Print_ISBN
    978-1-4799-1066-3
  • Type

    conf

  • DOI
    10.1109/MSMW.2013.6622028
  • Filename
    6622028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3375334