• DocumentCode
    3375345
  • Title

    Distribution of own point defects in Ag2Te single crystals

  • Author

    Vachkov, V. ; Vasilev, V. ; Gramatikov, P. ; Kovatchev, V. ; Michov, L. ; Georgiev, I.

  • Author_Institution
    Dept. of Phys., South-West Univ., Blagoevgrad, Bulgaria
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    80
  • Lastpage
    83
  • Abstract
    The influence of the inhomogeneity in the distribution of own point defects on the reluctance temperature dependence in Ag2Te is investigated. It is found that the dependence of the reluctance may be described by the theory of inhomogeneously doped semiconductors taking into account the possibility for fluctuational accumulations of impurity atoms. The influence of a magnetic field on the temperature dependence of reluctance in Ag2Te is discussed
  • Keywords
    defect states; galvanomagnetic effects; impurity distribution; impurity scattering; point defects; semiconductor materials; silver compounds; Ag2Te; impurity atoms; inhomogeneously doped semiconductors; magnetic field; point defects distribution; reluctance temperature dependence; single crystals; Annealing; Atomic measurements; Crystals; Effective mass; Electrons; Magnetic fields; Semiconductor impurities; Tellurium; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Electromagnetism, 2000. Proceedings of the Second International Symposium of Trans Black Sea Region on
  • Conference_Location
    Xanthi
  • Print_ISBN
    0-7803-6428-7
  • Type

    conf

  • DOI
    10.1109/AEM.2000.943239
  • Filename
    943239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3375345