Title :
Distribution of own point defects in Ag2Te single crystals
Author :
Vachkov, V. ; Vasilev, V. ; Gramatikov, P. ; Kovatchev, V. ; Michov, L. ; Georgiev, I.
Author_Institution :
Dept. of Phys., South-West Univ., Blagoevgrad, Bulgaria
Abstract :
The influence of the inhomogeneity in the distribution of own point defects on the reluctance temperature dependence in Ag2Te is investigated. It is found that the dependence of the reluctance may be described by the theory of inhomogeneously doped semiconductors taking into account the possibility for fluctuational accumulations of impurity atoms. The influence of a magnetic field on the temperature dependence of reluctance in Ag2Te is discussed
Keywords :
defect states; galvanomagnetic effects; impurity distribution; impurity scattering; point defects; semiconductor materials; silver compounds; Ag2Te; impurity atoms; inhomogeneously doped semiconductors; magnetic field; point defects distribution; reluctance temperature dependence; single crystals; Annealing; Atomic measurements; Crystals; Effective mass; Electrons; Magnetic fields; Semiconductor impurities; Tellurium; Temperature dependence; Temperature distribution;
Conference_Titel :
Applied Electromagnetism, 2000. Proceedings of the Second International Symposium of Trans Black Sea Region on
Conference_Location :
Xanthi
Print_ISBN :
0-7803-6428-7
DOI :
10.1109/AEM.2000.943239
