Title :
Blue/green semiconductor laser
Author_Institution :
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
Abstract :
Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength among conventional semiconductor LDs have been developed. The lifetime of green ZnMgSSe based LDs has been improved to be as long as 101 hours.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; 101 hour; InGaN; InGaN MQW LD; ZnMgSSe; blue/green semiconductor laser; green ZnMgSSe based LD; lifetime; shortest emission wavelength; violet InGaN multi-quantum-well structure laser diodes; Current measurement; Diode lasers; Electric variables measurement; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Optical materials; Pulse measurements; Quantum well devices; Semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553720
