Title :
Analysis of high current breakdown and UIS behavior of resurf LDMOS (RLDMOS) devices
Author :
Pendharkar, Sameer ; Efland, Taylor ; Tsai, Chi-Yi
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
This work analyzes unclamped inductive switching (UIS) behavior of two types of 40 V resurf (reduced surface field) lateral diffused MOSFETs (RLDMOSFETs). It is shown that the addition of a deep buffer implant region on the drain side of the device increases the snap-back current limit as well as UIS robustness. It is also shown, using 2D simulation, that the failure current limit under UIS conditions is not the same as the current at which the parasitic BJT turns on
Keywords :
electric breakdown; electric fields; failure analysis; fault currents; power MOSFET; semiconductor device models; semiconductor device reliability; semiconductor device testing; surface potential; switching; 2D simulation; 40 V; RLDMOS devices; RLDMOSFETs; UIS behavior; UIS conditions; UIS robustness; current breakdown; deep buffer implant region; device drain buffer implant region; failure current limit; parasitic BJT turn-on current; reduced surface field lateral diffused MOSFETs; resurf LDMOS devices; snap-back current; unclamped inductive switching; CMOS process; Doping; Electric breakdown; Implants; Instruments; MOSFETs; Robustness; Signal analysis; Stress; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702735
