Title :
Special session 5B: Panel How much toggle activity should we be testing with?
Author :
Wen, Xiaoqing ; Tehrani, Mohammad ; Kapur, Rohit ; Bhat, Anand ; Majumdar, Amitava ; Winemberg, LeRoy
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
Summary form only given. Power dissipation of an LSI circuit during scan testing, especially at-speed scan testing, can be several times higher than that during functional operations. Excessive test power causes hot spots and/or severe IR drop that may lead to chip damage, undue yield loss, or reliability degradation, especially for low-power LSI circuits. As a result, it is becoming increasingly important to reduce test power by lowering test-induced toggle activity in order to make scan test “power-safe”. However, with the stress on reducing toggle activity during scan test one might question: Have we gone too far? Should we reduce toggle activity below functional levels? Should we even plan for many test sets with different toggle activities? Can the test power problem be solved by existing DFT and ATPG solutions? What´s missing in today´s solutions? What´s next for low-power testing? This panel provides an interactive forum to discuss these critical questions with industry experts from both semiconductor and EDA companies. It helps practitioners and researchers alike in their quest for more effective and more efficient solutions to the test power problem.
Keywords :
automatic test pattern generation; boundary scan testing; design for testability; integrated circuit reliability; integrated circuit testing; integrated circuit yield; large scale integration; ATPG; DFT; EDA company; IR drop; at-speed scan testing; chip damage; functional operations; hot spots; interactive forum; low-power LSI circuits; low-power testing; power dissipation; reliability degradation; semiconductor company; test power; test-induced toggle activity; undue yield loss;
Conference_Titel :
VLSI Test Symposium (VTS), 2011 IEEE 29th
Conference_Location :
Dana Point, CA
Print_ISBN :
978-1-61284-657-6
DOI :
10.1109/VTS.2011.5783768