Title :
A novel high-conductivity IGBT (HiGT) with a short circuit capability
Author :
Mori, M. ; Uchino, Y. ; Sakano, J. ; Kobayashi, H.
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
This paper presents a new high-conductivity IGBT (HiGT) with a DMOS structure and an n-type hole-barrier layer surrounding a p-layer. The hole-barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n-layer. The HiGT provides a collector-emitter saturation voltage (VCE(sat)) of about 1 V lower than that of the conventional IGBT, while it maintains a high blocking voltage of 3.3 kV by controlling the carrier concentration of the hole-barrier layer. The HiGT has tough short circuit capability of more than 10 μs at 125°C with a saturation current similar to that of the conventional IGBT
Keywords :
MIS structures; carrier density; electrical conductivity; insulated gate bipolar transistors; power bipolar transistors; semiconductor device testing; 10 mus; 125 C; 3.3 kV; DMOS structure; HiGT; blocking voltage; carrier concentration; collector-emitter saturation voltage; high-conductivity IGBT; hole-barrier layer; n-type hole-barrier layer; n-type hole-barrier layer-surrounded p-layer; saturation current; short circuit capability; Charge carrier density; Charge carrier processes; Circuits; Insulated gate bipolar transistors; Inverters; Laboratories; Motor drives; Power supplies; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702737
