Title :
Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure
Author :
Koga, Takeharu ; Yamazaki, Kazuaki ; Wakimoto, Hiroki ; Takahashi, Yoshikazu ; Kirihata, Humiaki ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
Abstract :
A 2.5k V-1.8 kA advanced type power pack IGBT has been developed using an original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to the mechanical ruggedness, the high turn-off capability of collector current Ic=6600 A, peak collector voltage Vc(peak)=2400 V, junction temperature Tj=125°C and the wide SCSOA of Vcc=1800 V, I c=10000 A, Tj=125°C, tw=15 μs are realized. This high electrical ruggedness is obtained by decreasing the operational imbalance between chips
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; thermal stresses; 10000 A; 125 C; 15 mus; 1800 V; 2400 V; 6600 A; SCSOA; collector current; electrical ruggedness; junction temperature; mechanical ruggedness; multi-collector structure; operational imbalance; peak collector voltage; power cycling test; power pack IGBT; reliability; ruggedness; thermal stress; turn-off capability; Assembly; Diodes; Insulated gate bipolar transistors; Inverters; Packaging; Power system reliability; Research and development; Testing; Thermal resistance; Thermal stresses;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702739
