DocumentCode
3375569
Title
Quantum wire and dot lasers and related technologies
Author
Bimberg, Dieter
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
5
Lastpage
6
Abstract
Unique properties like increased gain, differential gain and relaxation oscillation frequency, reduced threshold current density and T/sub 0/ were predicted and recently demonstrated for quantum wire and dot structures fabricated by in-situ growth methods.
Keywords
current density; quantum well lasers; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; differential gain; in-situ growth methods; increased gain; quantum dot lasers; quantum wire lasers; reduced threshold current density; related technologies; relaxation oscillation frequency; Laser beam cutting; Laser modes; Optical materials; Quantum dot lasers; Quantum well lasers; Solids; Temperature distribution; Threshold current; US Department of Transportation; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553721
Filename
553721
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