Title :
8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity
Author :
Mawst, L.J. ; Bhattacharya, A. ; Lopez, J. ; Botez, D. ; Garbuzov, D.Z. ; DeMarco, L. ; Connolly, J.C. ; Jansen, M. ; Fang, F. ; Nabiev, R.F.
Author_Institution :
Wisconsin Univ., Madison, WI, USA
Abstract :
By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.
Keywords :
gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical losses; quantum well lasers; 0.2 to 1.0 mum; 0.6 mum; 0.98 mum; 100 /spl mu/m-aperture; 100 mum; 8 to 8.1 W; Al-free 0.88 /spl mu/m diode lasers; CW front-facet power; InGaAs-InGaP-GaAs; InGaAs/InGaP/GaAs lasers; SCH-SL-DQW; internal loss; large optical cavity; optical-cavity thickness; transverse spot size; Biomedical optical imaging; Diode lasers; Electrons; Gallium arsenide; Heat sinks; Indium gallium arsenide; Laser modes; Optical losses; Solid lasers; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553723
