5 W CW diffraction-limited InGaAs flared amplifier at 980 nm

Author

O´Brien, S. ; Schoenfelder, A. ; Lang, R.J.

Author_Institution

SDL Inc., San Jose, CA, USA

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

11

Lastpage

12

Abstract

A broad-area flared amplifier has been fabricated which produces 5 W CW at 972 nm in a single-lobed, diffraction-limited far field pattern. A high power, tunable diode laser is used for the injection source with an injected power of /spl sim/115 mW. We believe that the 5 W CW result reported is /spl sim/40% higher power than any reported power for 980 nm flared amplifiers and is the highest diffraction-limited power ever demonstrated from an all-diode source at any wavelength.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; light diffraction; optical fabrication; quantum well lasers; 115 mW; 5 W; 5 W CW diffraction-limited InGaAs flared amplifier; 972 to 980 nm; InGaAs; all-diode source; broad-area flared amplifier; diffraction-limited pow; fabrication; high power tunable diode laser; injected power; injection source; quantum well SCH active region; single-lobed diffraction-limited far field pattern; Diffraction; Diode lasers; High power amplifiers; Indium gallium arsenide; Laser beams; Oscillators; Power amplifiers; Power generation; Printing; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553724

Filename

553724