DocumentCode :
3376239
Title :
High efficiency gallium arsenide solar cells using Indium-Tin-Oxide nano-columns
Author :
Chang, C.H. ; Yu, Peichen ; Chiu, C.H. ; Kuo, H.C.
Author_Institution :
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
An array of conductive Indium-Tin-Oxide (ITO) nano-columns is deposited on GaAs solar cells using the oblique-angle electron-beam deposition method. Calculations based on a rigorous coupled-wave analysis method show that such ITO nano-columns offer superior angular and spectral anti-reflective (AR) properties. The optical characteristics of the ITO nano-columns are described. The conversion efficiency of GaAs solar cells with ITO nano-columns as the AR coating is increased by 23%, mainly limited by the quantum efficiency at the wavelengths below 600nm.
Keywords :
Coatings; Gallium arsenide; Indium tin oxide; Photovoltaic cells; Wavelength conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922456
Filename :
4922456
Link To Document :
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