DocumentCode
3376239
Title
High efficiency gallium arsenide solar cells using Indium-Tin-Oxide nano-columns
Author
Chang, C.H. ; Yu, Peichen ; Chiu, C.H. ; Kuo, H.C.
Author_Institution
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
4
Abstract
An array of conductive Indium-Tin-Oxide (ITO) nano-columns is deposited on GaAs solar cells using the oblique-angle electron-beam deposition method. Calculations based on a rigorous coupled-wave analysis method show that such ITO nano-columns offer superior angular and spectral anti-reflective (AR) properties. The optical characteristics of the ITO nano-columns are described. The conversion efficiency of GaAs solar cells with ITO nano-columns as the AR coating is increased by 23%, mainly limited by the quantum efficiency at the wavelengths below 600nm.
Keywords
Coatings; Gallium arsenide; Indium tin oxide; Photovoltaic cells; Wavelength conversion;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922456
Filename
4922456
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