980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence

Author

Yen, Shun-Tung ; Lin, Gray ; Liu, Der-Cherng ; Tsai, Chia-Ming ; Lee, Chien-Ping

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

13

Lastpage

14

Abstract

We report on the fabrication of 980 nm InGaAs-AlGaAs lasers with a specially designed cladding structure. For a 2.5 /spl mu/m wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13/spl deg/ and a lateral divergence of 8/spl deg/. Meanwhile, the threshold current can remain acceptably low. In addition, with another design, a record small vertical far field angle of 11/spl deg/ was obtained.

Keywords

III-V semiconductors; aluminium compounds; claddings; gallium arsenide; indium compounds; infrared sources; laser beams; laser transitions; optical fabrication; optical pumping; quantum well lasers; ridge waveguides; semiconductor technology; waveguide lasers; 2.5 mum; 980 nm; InGaAs-AlGaAs; InGaAs-AlGaAs laser fabrication; extremely low beam divergence; far field pattern; lateral divergence; nm InGaAs/AlGaAs quantum well lasers; ridge waveguide structure; small vertical far field angle; specially designed cladding structure; threshold current; vertical divergence; Fiber lasers; Indium gallium arsenide; Laser beams; Laser theory; Optical design; Optical waveguides; Pump lasers; Quantum well lasers; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553725

Filename

553725