Title :
Confinement effects of AlAs native-oxide apertures buried in quantum well lasers
Author :
Cheng, Yong ; MacDougal, Michael H. ; Lin, Chao-Kun ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
AlGaAs native-oxide apertures buried within epitaxial laser structures provide excellent current and optical confinement. We report here the experimental characterization and theoretical analysis of these confinement effects in quantum well lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser theory; oxidation; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; AlAs; AlAs native-oxide apertures; AlGaAs; AlGaAs native-oxide apertures; VCSEL; confinement effects; current confinement; epitaxial laser structures; optical confinement; quantum well lasers; vertical cavity surface emitting lasers; Apertures; Carrier confinement; Chaos; Integrated optics; Laser theory; Poisson equations; Quantum mechanics; Quantum well lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553726
