DocumentCode
3376555
Title
Confinement effects of AlAs native-oxide apertures buried in quantum well lasers
Author
Cheng, Yong ; MacDougal, Michael H. ; Lin, Chao-Kun ; Dapkus, P.Daniel
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
15
Lastpage
16
Abstract
AlGaAs native-oxide apertures buried within epitaxial laser structures provide excellent current and optical confinement. We report here the experimental characterization and theoretical analysis of these confinement effects in quantum well lasers.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser theory; oxidation; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; AlAs; AlAs native-oxide apertures; AlGaAs; AlGaAs native-oxide apertures; VCSEL; confinement effects; current confinement; epitaxial laser structures; optical confinement; quantum well lasers; vertical cavity surface emitting lasers; Apertures; Carrier confinement; Chaos; Integrated optics; Laser theory; Poisson equations; Quantum mechanics; Quantum well lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553726
Filename
553726
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