• DocumentCode
    3376607
  • Title

    Tandem quantum well solar cells

  • Author

    Browne, Ben ; Ioannides, Andreas ; Connolly, James ; Barnham, Keith ; Roberts, John ; Airey, Robert ; Hill, Geoffrey ; Smekens, Guy ; Van Begin, Jose

  • Author_Institution
    Experimental Solid State Physics, Blackett Laboratory, Imperial College London, SW7 2BW, UK
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Quantum wells offer advantages in conventional bulk tandem solar cells since they allow the independent tailoring of the absorption edge of either cell with no lattice mismatch and subsequent relaxation. We describe progress in the band gap engineering of InGaP/GaAs solar cells using strain balanced quantum wells and present a tandem quantum well structure which has achieved 30.6% efficiency under 54 suns AM1.5g. This is a record for photovoltaic nanostructured devices. We predict realistic efficiencies of 34% under 600suns, AM1.5d low AOD for optimized devices. Finally, the possibility and potential gains of introducing quantum wells into both cells of an InGaP/GaAs device are discussed.
  • Keywords
    Absorption; Capacitive sensors; Gallium arsenide; Lattices; Nanoscale devices; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922474
  • Filename
    4922474