DocumentCode
3376607
Title
Tandem quantum well solar cells
Author
Browne, Ben ; Ioannides, Andreas ; Connolly, James ; Barnham, Keith ; Roberts, John ; Airey, Robert ; Hill, Geoffrey ; Smekens, Guy ; Van Begin, Jose
Author_Institution
Experimental Solid State Physics, Blackett Laboratory, Imperial College London, SW7 2BW, UK
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
5
Abstract
Quantum wells offer advantages in conventional bulk tandem solar cells since they allow the independent tailoring of the absorption edge of either cell with no lattice mismatch and subsequent relaxation. We describe progress in the band gap engineering of InGaP/GaAs solar cells using strain balanced quantum wells and present a tandem quantum well structure which has achieved 30.6% efficiency under 54 suns AM1.5g. This is a record for photovoltaic nanostructured devices. We predict realistic efficiencies of 34% under 600suns, AM1.5d low AOD for optimized devices. Finally, the possibility and potential gains of introducing quantum wells into both cells of an InGaP/GaAs device are discussed.
Keywords
Absorption; Capacitive sensors; Gallium arsenide; Lattices; Nanoscale devices; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922474
Filename
4922474
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