• DocumentCode
    3376658
  • Title

    Design and fabrication of silicon membrane by wet bulk micromachining process

  • Author

    Pramanick, Bidhan ; Kundu, Pijus ; Bhattacharyya, Tarun K. ; Das, Soumen

  • Author_Institution
    Adv. Technol. Dev. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India
  • fYear
    2011
  • fDate
    14-16 Jan. 2011
  • Firstpage
    270
  • Lastpage
    274
  • Abstract
    A silicon membrane is very important part of the MEMS (Micro-Electro-Mechanical System) devices or itself is a useful device. The design and simulation has been performed in COVENTORWARE® for the fabrication of membrane. The thickness of Piezoelectric actuator is assumed 9mm as this is the thickness of commercially available Lead Zirconate Titanate (PZT) actuator. Potassium Hydroxide (KOH) is used as etchant of silicon for the realisation of 75μm thick silicon membrane. The micromachining is carried out at 70°C using 44% KOH solution. The etch rate depends on the etchant concentration as well as temperature. The etch rate of silicon decreases with the increase of KOH concentration and increases with the increase of temperature. The membrane is designed and fabricated for high fluid pressure application of piezoelectric actuated devices.
  • Keywords
    etching; membranes; micromachining; micromechanical devices; oxygen compounds; piezoelectric actuators; potassium compounds; COVENTORWARE; MEMS; etchant concentration; lead zirconate titanate actuator; micro-electro-mechanical system device; piezoelectric actuated device; piezoelectric actuator; potassium hydroxide; silicon membrane design; silicon membrane fabrication; temperature 70 C; wet bulk micromachining process; Actuators; Educational institutions; Electromagnetics; Etching; Micromechanical devices; Sensors; Coventorware; KOH; Membrane; Micromachining; PZT; Piezoelectric actuation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Students' Technology Symposium (TechSym), 2011 IEEE
  • Conference_Location
    Kharagpur
  • Print_ISBN
    978-1-4244-8941-1
  • Type

    conf

  • DOI
    10.1109/TECHSYM.2011.5783828
  • Filename
    5783828