DocumentCode :
3376658
Title :
Design and fabrication of silicon membrane by wet bulk micromachining process
Author :
Pramanick, Bidhan ; Kundu, Pijus ; Bhattacharyya, Tarun K. ; Das, Soumen
Author_Institution :
Adv. Technol. Dev. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India
fYear :
2011
fDate :
14-16 Jan. 2011
Firstpage :
270
Lastpage :
274
Abstract :
A silicon membrane is very important part of the MEMS (Micro-Electro-Mechanical System) devices or itself is a useful device. The design and simulation has been performed in COVENTORWARE® for the fabrication of membrane. The thickness of Piezoelectric actuator is assumed 9mm as this is the thickness of commercially available Lead Zirconate Titanate (PZT) actuator. Potassium Hydroxide (KOH) is used as etchant of silicon for the realisation of 75μm thick silicon membrane. The micromachining is carried out at 70°C using 44% KOH solution. The etch rate depends on the etchant concentration as well as temperature. The etch rate of silicon decreases with the increase of KOH concentration and increases with the increase of temperature. The membrane is designed and fabricated for high fluid pressure application of piezoelectric actuated devices.
Keywords :
etching; membranes; micromachining; micromechanical devices; oxygen compounds; piezoelectric actuators; potassium compounds; COVENTORWARE; MEMS; etchant concentration; lead zirconate titanate actuator; micro-electro-mechanical system device; piezoelectric actuated device; piezoelectric actuator; potassium hydroxide; silicon membrane design; silicon membrane fabrication; temperature 70 C; wet bulk micromachining process; Actuators; Educational institutions; Electromagnetics; Etching; Micromechanical devices; Sensors; Coventorware; KOH; Membrane; Micromachining; PZT; Piezoelectric actuation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Students' Technology Symposium (TechSym), 2011 IEEE
Conference_Location :
Kharagpur
Print_ISBN :
978-1-4244-8941-1
Type :
conf
DOI :
10.1109/TECHSYM.2011.5783828
Filename :
5783828
Link To Document :
بازگشت