Spatially resolved silicon solar cell characterization using infrared imaging methods

Author

Kasemann, M.A. ; Kwapil, W. ; Schubert, M.C. ; Habenicht, H. ; Walter, B. ; The, M. ; Kontermann, S. ; Rein, S. ; Breitenstein, O. ; Bauer, J. ; Lotnyk, A. ; Michl, B. ; Nagel, H. ; Schutt, A. ; Carstensen, J. ; Foll, H. ; Trupke, T. ; Augarten, Y. ; Kamp

Author_Institution

Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstr. 2, 79110 Freiburg, Germany

fYear

2008

fDate

11-16 May 2008

Firstpage

1

Lastpage

7

Abstract

We present a comprehensive overview over infrared imaging techniques for (electrical) silicon solar cell characterization. Recent method development in local series resistance imaging is reviewed in more detail and new results in local breakdown investigations on multicrystalline (mc) silicon solar cells are reported. We observe local junction breakdown sites on industrial mc-cells at reverse voltages as low as −7V and breakdown in great areas of the cell at voltages around −14V. As these breakdown sites (as well as local shunts) can cause hot spots which can damage the cell and the module, we also present an ultra-fast, simple and quantitative method for hot-spot detection. Typical measurement times in the order of 10 milliseconds are achieved.

Keywords

Breakdown voltage; Electric breakdown; Electric resistance; Image resolution; Infrared imaging; Low voltage; Optical imaging; Photovoltaic cells; Silicon; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE

Conference_Location

San Diego, CA, USA

ISSN

0160-8371

Print_ISBN

978-1-4244-1640-0

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2008.4922478

Filename

4922478