High-speed modulation characteristics of oxide-apertured vertical-cavity laser

Author

Thibeault, B.J. ; Bertilsson, K. ; Hegblom, E.R. ; Floyd, P.D. ; Coldren, L.A.

Author_Institution

Dept. of Electr. Eng., California Univ., Santa Barbara, CA, USA

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

17

Lastpage

18

Abstract

In this paper, we characterize the modulation characteristics of oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers. A bandwidth of 15.3 GHz at only 2.1 mA of current with a state-of-the-art modulation current efficiency of 14 GHz/mA/sup 1/2 / is demonstrated for a 3.1 μm diameter device. We show that the intrinsic speed is limited to ∼46 GHz by gain compression and that a 10 GHz parasitic limits current device performance.

Keywords

distributed Bragg reflector lasers; electro-optical modulation; gallium arsenide; indium compounds; laser cavity resonators; oxidation; quantum well lasers; 15.3 GHz; 2.1 mA; 3.1 mum; GHz parasitic limits; InGaAs-GaAs; current device performance; gain compression; high-speed modulation characteristics; intrinsic speed; modulation characteristics; oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers; oxide-apertured vertical-cavity laser; state-of-the-art modulation current efficiency; Bandwidth; Frequency; Optical losses; Optical modulation; Optical scattering; Performance gain; Power generation; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553727

Filename

553727