Title :
Quality Factors and Energy Losses of Single-Crystal Silicon Nanowire Electromechanical Resonators
Author :
Feng, X.L. ; He, R.R. ; Yang, P.D. ; Roukes, M.L.
Author_Institution :
California Inst. of Technol., Pasadena
Abstract :
We report measurements on quality factors (Q´s) of single-crystal silicon nanowire (SiNW) resonators operating in the very-high frequency (VHF) range. Q´s of ~200 MHz metalized SiNWs are considerably lower than those of the pristine SiNWs operating at similar frequencies. The observed damping effect due to resonance transduction agrees well with the loaded-Q model for magnetomotive scheme. The temperature dependency of dissipation (Q-1 ) is found to be approximately from Q-1 prop T0.3 to Q-1 prop T0.4. Clamping losses are becoming important for such VHF ultrasmall resonators.
Keywords :
Q-factor; VHF devices; losses; micromechanical resonators; nanowires; silicon; Si; VHF ultrasmall resonators; clamping losses; damping effect; electromechanical resonators; energy losses; loaded-Q model; magnetomotive scheme; quality factor; resonance transduction; single-crystal silicon nanowire resonators; temperature dependency; Clamps; Damping; Energy loss; Load modeling; Metallization; Nanoelectromechanical systems; Q factor; Resonance; Resonant frequency; Silicon; Dissipation; Nanoelectromechanical System; Nanowire; Quality Factor (Q); Resonator;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
DOI :
10.1109/SENSOR.2007.4300384