• DocumentCode
    3376879
  • Title

    Quality Factors and Energy Losses of Single-Crystal Silicon Nanowire Electromechanical Resonators

  • Author

    Feng, X.L. ; He, R.R. ; Yang, P.D. ; Roukes, M.L.

  • Author_Institution
    California Inst. of Technol., Pasadena
  • fYear
    2007
  • fDate
    10-14 June 2007
  • Firstpage
    1325
  • Lastpage
    1326
  • Abstract
    We report measurements on quality factors (Q´s) of single-crystal silicon nanowire (SiNW) resonators operating in the very-high frequency (VHF) range. Q´s of ~200 MHz metalized SiNWs are considerably lower than those of the pristine SiNWs operating at similar frequencies. The observed damping effect due to resonance transduction agrees well with the loaded-Q model for magnetomotive scheme. The temperature dependency of dissipation (Q-1 ) is found to be approximately from Q-1 prop T0.3 to Q-1 prop T0.4. Clamping losses are becoming important for such VHF ultrasmall resonators.
  • Keywords
    Q-factor; VHF devices; losses; micromechanical resonators; nanowires; silicon; Si; VHF ultrasmall resonators; clamping losses; damping effect; electromechanical resonators; energy losses; loaded-Q model; magnetomotive scheme; quality factor; resonance transduction; single-crystal silicon nanowire resonators; temperature dependency; Clamps; Damping; Energy loss; Load modeling; Metallization; Nanoelectromechanical systems; Q factor; Resonance; Resonant frequency; Silicon; Dissipation; Nanoelectromechanical System; Nanowire; Quality Factor (Q); Resonator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
  • Conference_Location
    Lyon
  • Print_ISBN
    1-4244-0842-3
  • Electronic_ISBN
    1-4244-0842-3
  • Type

    conf

  • DOI
    10.1109/SENSOR.2007.4300384
  • Filename
    4300384