Stable linearly polarized light emission from VCSELs with oxidized elliptical current aperture

Author

Fiedler, U. ; Wiedenmann, D. ; Weigl, B. ; Jung, C. ; Reiner, G. ; Buck, M. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

19

Lastpage

20

Abstract

We have fabricated oxidized InGaAs MQW VCSELs with elliptical current aperture. The lasers emit linearly polarized light up to thermal roll over. The polarization extinction ratio of better than 20 dB is also maintained under 2.5 Gbit/s large signal amplitude modulation.

Keywords

III-V semiconductors; amplitude modulation; electro-optical modulation; gallium arsenide; indium compounds; laser cavity resonators; light polarisation; optical transmitters; quantum well lasers; surface emitting lasers; 2.5 Gbit/s; Gbit/s large signal amplitude modulation; InGaAs; elliptical current aperture; linearly polarized light; oxidized InGaAs QW VCSELs; oxidized elliptical current aperture; polarization extinction ratio; stable linearly polarized light emission; thermal roll over; Amplitude modulation; Apertures; Extinction ratio; Gallium arsenide; Laser modes; Laser stability; Optical polarization; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553728

Filename

553728