Title :
High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics
Author :
Palacios, T. ; Calle, F. ; Grajal, J. ; Monroy, E. ; Eickhoff, M. ; Ambacher, O. ; Omnès, F.
Author_Institution :
Dpto. Ingenieria Electronica, Univ. Politecnica de Madrid, Spain
Abstract :
In this paper, the technology and properties of surface acoustic wave (SAW) devices on AlN and GaN films are reviewed. The excellent characteristics of these materials for high frequency applications are demonstrated by the fabrication of SAW filters with central frequencies higher than 2.2 GHz. The thermal behavior of these filters has been analyzed. Finally, the integration of a SAW generator with a metal-semiconductor-metal photodetector is described, showing the important synergy resulting from such integration.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; reviews; semiconductor thin films; surface acoustic wave filters; wide band gap semiconductors; 2.2 GHz; AlGaN; AlN; AlN films; GaN; GaN films; SAW device characterization; SAW device fabrication; SAW device/optoelectronics integration; SAW filters; high frequency applications; metal-semiconductor-metal photodetector; review; surface acoustic wave; thermal behavior; Aluminum gallium nitride; Frequency; Gallium nitride; Lithography; Optical device fabrication; Photodetectors; SAW filters; Surface acoustic wave devices; Surface acoustic waves; Surface morphology;
Conference_Titel :
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
Print_ISBN :
0-7803-7582-3
DOI :
10.1109/ULTSYM.2002.1193352
