MEMS-Based Uncooled Infrared Focal Plane Arrays

Author

Kimata, Masafumi

Author_Institution

Ritsumeikan Univ., Kusatsu

fYear

2007

fDate

10-14 June 2007

Firstpage

1357

Lastpage

1360

Abstract

This paper reviews the progress of MEMS-based uncooled infrared focal plane arrays (IRFPAs), which are one of the most successful examples of integrated MEMS devices. Among reported MEMS-based uncooled IRFPAs, two types with resistance bolometer and SOI diode have achieved integration of 640times480 pixels and noise equivalent temperature differences (NETDs) of less than 50 mK with f/1 optics. We compare these two technologies from the viewpoint of pixel structure, detector material, infrared absorber, and micromachining process. The increasing importance of micromachining process technology in advanced uncooled IRFPAs is also discussed.

Keywords

bolometers; focal planes; infrared detectors; micromachining; micromechanical devices; IRFPA; MEMS; SOI diode; detector material; infrared absorber; micromachining process technology; noise equivalent temperature differences; pixel structure; resistance bolometer; uncooled infrared focal plane arrays; Bolometers; Circuits; Diodes; Ferroelectric materials; Infrared detectors; Infrared sensors; Micromachining; Substrates; Temperature sensors; Thermal conductivity; SOI diode; infrared focal plane array; microbolometer; uncooled;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300394

Filename

4300394