DocumentCode
3377137
Title
Operation of 2-dimensional arrays os 1.3-/spl mu/m surface-emitting lasers transferred onto a Si motherboard utilizing a AuSn soldering
Author
Plais, A. ; Lafragette, J.-L. ; Starck, C. ; Salet, P. ; Gerard, F. ; Fillion, T. ; Jacquet, J.
Author_Institution
Alcatel Alsthom Recherche, Marcoussis, France
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
21
Lastpage
22
Abstract
The experimental parameters for the soldering of an InP wafer onto a Si substrate have been optimised and used for the fabrication of matrices of 1.3-μm VCSELs. The lasers operate at room temperature under pulsed injection; characteristics of such a 3×3 array will be presented.
Keywords
III-V semiconductors; indium compounds; infrared sources; laser cavity resonators; laser transitions; optical fabrication; semiconductor laser arrays; semiconductor technology; soldering; surface emitting lasers; /spl mu/m VCSELs; /spl mu/m surface-emitting lasers; 1.3 mum; 2-dimensional arrays; 3/spl times/3 array; AuSn; AuSn soldering; InP; InP wafer; Si motherboard; Si substrate; pulsed injection; room temperature; Bonding; Mirrors; Optical arrays; Soldering; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553729
Filename
553729
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