Title :
Loss analysis of 1.55 /spl mu/m vertical cavity lasers
Author :
Piprek, J. ; Babic, D.I. ; Margalit, N.M. ; Bowers, J.E.
Author_Institution :
Delaware Univ., Newark, DE, USA
Abstract :
Recently, room temperature cw operation of 1.55 μm InGaAsP MQW DBR VCSELs has been achieved for the first time. At higher temperatures, laser operation is restricted by internal losses including intervalenceband absorption and carrier leakage. Measured characteristics are simulated using a comprehensive numerical model to analyze those losses in detail and to optimize the VCSEL design.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser theory; laser transitions; optical design techniques; optical losses; optical transmitters; optimisation; quantum well lasers; semiconductor device models; surface emitting lasers; /spl mu/m vertical cavity laser loss analysis; 1.55 mum; InGaAsP; InGaAsP MQW DBR VCSELs; VCSEL design optimisation; carrier leakage; comprehensive numerical model; higher temperatures; internal losses; intervalenceband absorption; laser operation; room temperature cw operation; Absorption; Analytical models; Design optimization; Distributed Bragg reflectors; Laser modes; Loss measurement; Numerical models; Quantum well devices; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553731
