DocumentCode :
3377789
Title :
Studies of Cu location near the back contact of CdS/CdTe solar cells
Author :
Plotnikov, V.V. ; Liu, X. ; Compaan, A.D.
Author_Institution :
Department of Physics and Astronomy, University of Toledo, OH 43606 USA
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
3
Abstract :
We have used the x-ray fluorescence signal from copper selectively excited with a ∼10 keV photon beam from the Argonne Advanced Photon Source to probe low levels of copper in sputtered CdTe cells. Through a peel-off technique that separates the evaporated Cu/Au back contact from the CdTe, we are able to determine where the Cu resides after cell preparation is finished. With a 3 to 4 nm Cu layer under the 20 nm of gold, we find that about 10% stays with the CdTe after contact peel-off. Recontacting these cells with fresh gold yields cell performance very close to the originally prepared contacts indicating that only 3–4 Å of copper is needed for a good contact that exhibits no rollover in the first quadrant of the I–V curve.
Keywords :
Astronomy; Copper; Fluorescence; Gold; Grain boundaries; Photovoltaic cells; Physics; Probes; Semiconductor device doping; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922540
Filename :
4922540
Link To Document :
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