Title :
Integrated amplifier-modulators fabricated in Grinsch-SQW structures by impurity induced disordering with fluorine
Author :
No, K. ; Tull, J. ; Appelman, H. ; Krebs, D. ; Levy, J.
Author_Institution :
McDonnell Douglas Electronic Systems Company
Keywords :
Annealing; Gallium arsenide; Implants; Impurities; Linearity; Optical amplifiers; Optical modulation; Phase modulation; Stimulated emission; Voltage;
Conference_Titel :
Semiconductor Laser Devices and Applications, 1990. Conference Digest., LEOS Summer Topical on New
Conference_Location :
Monterey, CA, USA
DOI :
10.1109/NSLDA.1990.690830
