Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs

Author

Boos, J.B. ; Kruppa, W. ; Park, D. ; Molnar, B. ; Bass, R. ; Goldenberg, M. ; Bennett, B.R. ; Mittereder, J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

354

Lastpage

357

Abstract

We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 Ω-mm was achieved using a 300°C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 μm gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 Ω-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 Ω-mm was achieved using a 175°C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 μm gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 Ω-mm

Keywords

Auger effect; III-V semiconductors; aluminium compounds; chemical interdiffusion; contact resistance; germanium alloys; gold; gold alloys; high electron mobility transistors; indium compounds; nickel; ohmic contacts; palladium; platinum; rapid thermal annealing; semiconductor device metallisation; semiconductor-metal boundaries; 0.08 to 0.61 ohmmm; 0.2 micron; 0.5 micron; 1.3 S/mm; 175 C; 300 C; AlSb-InAs; AlSb/InAs HEMTs; Au in-diffusion; AuGe-Ni-Pt-Au; AuGe/Ni/Pt/Au ohmic contacts; Auger depth profiling; Pd-Pt-Au; Pd/Pt/Au ohmic contacts; RTA; contact resistance; fabrication; hot plate heat treatment; ohmic contact metalizations; rapid thermal anneal; Contact resistance; Fabrication; Gold; HEMTs; MODFETs; Ohmic contacts; Rapid thermal annealing; Resistance heating; Thermal resistance; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492255

Filename

492255