A high performance deep submicron MOSFET structure with self-aligned selectively grown W-gate (SAW)

Author

Koh, Yo Hwan ; Park, Chan Kwang ; Hwang, Seong Min ; Rho, Kwang Myoung ; Chung, Myoung Jun ; Lee, Dai-Hoon

Author_Institution

Semicond. R&D Div., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

268

Lastpage

272

Abstract

A novel structure for high performance deep submicron MOSFETs, which is called the SAW (Self-Aligned selectively grown W-gate) MOSFET, is proposed. The SAW MOSFET structure has extremely low gate resistance due to the use of tungsten as gate electrode and low source/drain junction capacitance due to the threshold voltage adjustment implantation into the channel region only. In order to get a steep subthreshold slope, moderate threshold voltage, and high saturation current, a retrograde shaped channel profile is also used

Keywords

MOSFET; semiconductor device metallisation; tungsten; W; deep submicron SAW MOSFET; gate resistance; implantation; retrograde shaped channel profile; saturation current; self-aligned selectively grown W-gate; source/drain junction capacitance; subthreshold slope; threshold voltage; Capacitance; Doping; Electrodes; Fabrication; Implants; MOS devices; MOSFET circuits; Surface acoustic waves; Threshold voltage; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524701

Filename

524701